国家/地区 Korea（17）
关键词 GRAPHENE（7） DOPING（3） FIELD EFFECT TRANSI.（3）
CHARGE TRANSPORT（2） REDUCED GRAPHENE OX.（2） SEMICONDUCTOR（2）
出版物 CHEMISTRYA EUROPEAN.（4） APPLIED PHYSICS LET.（2） CHEMICAL COMMUNICAT.（2）
JOURNAL OF THE KORE.（2）
出版时间 2012（17）
机构 SUNGKYUNKWAN.（7） DONGGUK UNIV.（3） SEOUL NATL U.（3）
作者 SEO S（17）

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM SM, LEE Y, SEO DH, SEO S, WANG KL

Compact modeling of extremely scaled graphene FETs

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE J, SHIN H, CHUNG HJ, LEE J, HEO J, YANG H, LEE SH, SEO S

Atomic Dopants Involved in the Structural Evolution of Thermally Graphitized Graphene

CHEMISTRYA EUROPEAN JOURNAL

YOON Y, SEO S, KIM G, LEE H

Charge transport in graphene doped with diatomic halogen molecules (I-2, Br-2) near Dirac point

SYNTHETIC METALS

CHU SW, BAEK SJ, KIM DC, SEO S, KIM JS, PARK YW

Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices

CARBON

LEE SK, KANG CG, LEE YG, CHO C, PARK E, CHUNG HJ, SEO S, LEE HD, LEE BH

Synthesis of Highly n-Type Graphene by Using an Ionic Liquid

CHEMISTRYA EUROPEAN JOURNAL

BHUNIA P, HWANG E, YOON Y, LEE E, SEO S, LEE H

Flexible glucose sensor using CVD-grown graphene-based field effect transistor

BIOSENSORS BIOELECTRONICS

KWAK YH, CHOI DS, KIM YN, KIM H, YOON DH, AHN SS, YANG JW, YANG WS, SEO S

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Effect of Temperature and Humidity on NO2 and NH3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

IEEE ELECTRON DEVICE LETTERS

KIM CH, YOO SW, NAM DW, SEO S, LEE JH

Can Commonly Used Hydrazine Produce n-Type Graphene?

CHEMISTRYA EUROPEAN JOURNAL

SOME S, BHUNIA P, HWANG E, LEE K, YOON Y, SEO S, LEE H