国家/地区 Korea（7）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2011（2） 2013（2）
机构 GWANGJU INST SCI TECHNOL（7）
作者 LIM SK（7）

Quantitatively estimating defects in graphene devices using discharge current analysis method

SCIENTIFIC REPORTS

JUNG U, LEE YG, KANG CG, LEE S, KIM JJ, HWANG HJ, LIM SK, HAM MH, LEE BH

Effects of multi-layer graphene capping on Cu interconnects

NANOTECHNOLOGY

KANG CG, LIM SK, LEE S, LEE SK, CHO C, LEE YG, HWANG HJ, KIM Y, CHOI HJ, CHOE SH, HAM MH, LEE BH

Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors

CARBON

KANG CG, LEE YG, LEE SK, PARK E, CHO C, LIM SK, HWANG HJ, LEE BH

Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices

APPLIED PHYSICS LETTERS

CHOE M, CHO CY, SHIM JP, PARK W, LIM SK, HONG WK, LEE BH, LEE DS, PARK SJ, LEE T

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH

Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC

APPLIED PHYSICS LETTERS

HWANG HJ, CHO C, LIM SK, LEE SY, KANG CG, HWANG H, LEE BH

Origin of the channel width dependent field effect mobility of graphene field effect transistors

MICROELECTRONIC ENGINEERING

LEE YG, LIM SK, KANG CG, KIM YJ, CHOI DH, CHUNG HJ, CHOI R, LEE BH