国家/地区 Korea（4）
关键词
出版物
出版时间 2015（4）
机构 GWANGJU INST SCI TECHNOL（4）
作者 LEE YG（4）

Graphene transfer in vacuum yielding a high quality graphene

CARBON

LEE S, LEE SK, KANG CG, CHO C, LEE YG, JUNG U, LEE BH

Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

APPLIED PHYSICS LETTERS

CHO C, LEE SK, NOH JW, PARK W, LEE S, LEE YG, HWANG HJ, KANG CG, HAM MH, LEE BH

Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

JUNG U, KIM YJ, KIM Y, LEE YG, LEE BH

A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors

NANOSCALE

KIM YJ, LEE YG, JUNG U, LEE S, LEE SK, LEE BH