国家/地区 Korea（10）
关键词 GRAPHENE（2）
出版物 NANOTECHNOLOGY（3） RSC ADVANCES（3） ACS NANO（2）
APPLIED PHYSICS LET.（2）
出版时间 2016（7）
机构 POHANG UNIV SCI TECHNOL（10）
作者 LEE P（10）

Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

ACS NANO

KIM N, LEE P, KIM Y, KIM JS, KIM Y, NOH DY, YU SU, CHUNG J, KIM KS

Observation of variable hybridized-band gaps in Eu-intercalated graphene

NANOTECHNOLOGY

SUNG S, KIM S, LEE P, KIM J, RYU M, PARK H, KIM K, MIN BI, CHUNG J

Modification of thermal and electronic properties of bilayer graphene by using slow Na+ ions

NANOTECHNOLOGY

RYU M, LEE P, KIM J, PARK H, CHUNG J

Observation of Mg-induced structural and electronic properties of graphene

APPLIED PHYSICS LETTERS

PARK H, SINGH LT, LEE P, KIM J, RYU M, HWANG CC, KIM KS, CHUNG J

Band gap engineering for single-layer graphene by using slow Li+ ions

NANOTECHNOLOGY

RYU M, LEE P, KIM J, PARK H, CHUNG J

Modification of electronic properties of graphene by using low-energy K+ ions

APPLIED PHYSICS LETTERS

KIM J, LEE P, RYU M, PARK H, CHUNG J

Cerium-induced changes in the pi-band of graphene

RSC ADVANCES

KIM J, LEE P, RYU M, PARK H, CHUNG J

Band and bonding characteristics of N-2(+) ion-doped graphene

RSC ADVANCES

PARK H, CHOI S, LEE P, KIM J, RYU M, KIM KS, CHUNG J

Band modification of graphene by using slow Cs+ ions

RSC ADVANCES

SUNG S, LEE SH, LEE P, KIM J, PARK H, RYU M, KIM N, HWANG C, JHI SH, CHUNG J

Proximity Effect Induced Electronic Properties of Graphene on Bi2Te2Se

ACS NANO

LEE P, JIN KH, SUNG SJ, KIM JG, RYU MT, PARK HM, JHI SH, KIM N, KIM Y, YU SU, KIM KS, NOH DY, CHUNG J