国家/地区 Korea（5）
关键词 ATOMIC LAYER DEPOSI.（2） CAPACITANCE EQUIVAL.（2） GRAPHENE（2）
出版物
出版时间 2016（2） 2018（2）
机构 SAMSUNG ADV INST TECHNOL（5）
作者 CHO Y（5）

Unraveling the Structural and Electronic Properties of Graphene/Ge(110)

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

KIM HW, KO W, JOO WJ, CHO Y, OH Y, KU J, JEON I, PARK S, HWANG SW

Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties

ADVANCED ELECTRONIC MATERIALS

LEE CS, SHIN KW, SONG HJ, PARK H, CHO Y, IM DH, LEE H, LEE JH, WON JY, CHUNG JG, KIM C, BYUN KE, LEE EK, KIM Y, KO W, LIM HJ, PARK S, SHIN HJ

Quenching of the Resonant States of Single Carbon Vacancies in Graphene/Pt(111)

JOURNAL OF PHYSICAL CHEMISTRY C

KIM HW, KU J, KO W, CHO Y, JEON I, HWANG SW

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

ACS Nano

LEE Y, JEON W, CHO Y, LEE MH, JEONG SJ, PARK J, PARK S