国家/地区 Korea（7）
关键词 GRAPHENE（3）
出版物 ACS NANO（2）
出版时间 2011（3） 2016（2）
机构 SAMSUNG ADV INST TECHNOL（7）
作者 HEO J（7）

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

SCIENCE

YANG H, HEO J, PARK S, SONG HJ, SEO DH, BYUN KE, KIM P, YOO I, CHUNG HJ, KIM K

Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition

PHYSICAL REVIEW B

HEO J, CHUNG HJ, LEE SH, YANG H, SEO DH, SHIN JK, CHUNG UI, SEO S, HWANG EH, DAS SARMA S

Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene

ACS NANO

LEE SH, CHUNG HJ, HEO J, YANG H, SHIN J, CHUNG UI, SEO S

Passivation of Metal Surface States: Microscopic Origin for Uniform Mono layer Graphene by Low Temperature Chemical Vapor Deposition

ACS NANO

JEON I, YANG H, LEE SH, HEO J, SEO DH, SHIN J, CHUNG UI, KIM ZG, CHUNG HJ, SEO S

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

SCIENTIFIC REPORTS

JEONG SJ, GU Y, HEO J, YANG J, LEE CS, LEE MH, LEE Y, KIM H, PARK S, HWANG S

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

JEONG H, HEO J, KYOUNG J, BAIK CW, PARK S, HWANG SW, LEE CW