国家/地区 Korea（5）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物 ADVANCED MATERIALS（5）
出版时间 2012（3）
机构
作者 KIM J（2） LEE S（2）

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

ADVANCED MATERIALS

CHEE SS, SEO D, KIM H, JANG H, LEE S, MOON SP, LEE KH, KIM SW, CHOI H, HAM MH

Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

ADVANCED MATERIALS

SOME S, KIM J, LEE K, KULKARNI A, YOON Y, LEE S, KIM T, LEE H

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

ADVANCED MATERIALS

TRUNG TQ, TIEN NT, KIM D, JUNG JH, YOON OJ, LEE NE

Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

ADVANCED MATERIALS

PARK J, JO SB, YU YJ, KIM Y, YANG W, LEE WH, KIM HH, HONG BH, KIM P, CHO K, KIM KS

Highly Transparent and Stretchable Field-Effect Transistor Sensors Using Graphene-Nanowire Hybrid Nanostructures

ADVANCED MATERIALS

KIM J, LEE MS, JEON S, KIM M, KIM S, KIM K, BIEN F, HONG SY, PARK JU