国家/地区 Korea（3）
关键词 NONVOLATILE MEMORY（3）
出版物 JOURNAL OF THE KOREAN PHYSICAL SOCIETY（3）
出版时间
机构
作者 LEE S（2）

Resistive switching in graphene/graphene oxide/ZnO heterostructures

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

KAPITANOVA OO, PANIN GN, KONONENKO OV, BARANOV AN, KANG TW

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

Different working mechanisms for a graphene resistive memory based on oxygen-ion transport

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S