国家/地区 Russia（21）
关键词 GRAPHENE（7） RAMAN SPECTROSCOPY（5） 4HSIC（2）
AFM（2） GRAPHENE ON SILICON.（2） INTERCALATION（2）
SILICIDE（2） SILICON CARBIDE（2）
出版物 PHYSICS OF THE SOLI.（8） SEMICONDUCTORS（5） FULLERENES NANOTUBE.（3）
出版时间 2018（7） 2020（7） 2019（5）
机构 IOFFE INST（21）
作者 LEBEDEV SP（21）

Detection of lysine molecular ions in solution gated field effect transistors based on unmodified graphene

JOURNAL OF APPLIED PHYSICS

BUTKO AV, BUTKO VY, LEBEDEV SP, LEBEDEV AA, DAVYDOV VY, ELISEYEV IA, KUMZEROV YA

Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, BELOV SV, ZUBOV AV, LEBEDEV SP, LEBEDEV AA

Formation of Iron Silicides Under Graphene Grown on the Silicon Carbide Surface

PHYSICS OF THE SOLID STATE

GREBENYUK GS, ELISEEV IA, LEBEDEV SP, LOBANOVA EY, SMIRNOV DA, DAVYDOV VY, LEBEDEV AA, PRONIN II

Intercalation Synthesis of Cobalt Silicides under Graphene Grown on Silicon Carbide

PHYSICS OF THE SOLID STATE

GREBENYUK GS, ELISEEV IA, LEBEDEV SP, LOBANOVA EY, SMIRNOV DA, DAVYDOV VY, LEBEDEV AA, PRONIN II

Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

ELISEYEV IA, SMIRNOV AN, LEBEDEV SP, PANTELEEV VN, DEMENTEV PA, PEZOLDT J, HARTUNG G, KROGER J, ZUBOV AV, LEBEDEV AA

Comparison of graphene films grown on 6H-SiC and 4H-SiC substrates

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

LEBEDEV SP, AMEL CHUK DG, ELISEYEV IA, NIKITINA IP, DEMENTEV PA, ZUBOV AV, LEBEDEV AA

Surface morphology control of the SiC (0001) substrate during the graphene growth

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

LEBEDEV SP, AMEL CHUK DG, ELISEYEV IA, BARASH IS, DEMENTEV PA, ZUBOV AV, LEBEDEV AA

Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films

TECHNICAL PHYSICS

LEBEDEV SP, BARASH IS, ELISEYEV IA, DEMENTEV PA, LEBEDEV AA, BULAT PV

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY

MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation

SEMICONDUCTOR SCIENCE TECHNOLOGY

BORODIN BR, BENIMETSKIY FA, DUNAEVSKIY MS, SHAROV VA, SMIRNOV AN, DAVYDOV VY, LAHDERANTA E, LEBEDEV SP, LEBEDEV AA, ALEKSEEV PA