国家/地区 Sweden（5）
关键词 FIELDEFFECT TRANSISTORS FETS（5）
出版物 IEEE TRANSACTIONS O.（2）
出版时间
机构 CHALMERS UNI.（3）
作者 STAKE J（5）

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

YANG XX, VOROBIEV A, JEPPSON K, STAKE J

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, HABIBPOUR O, VUKUSIC J, STAKE J

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, ZHANG YX, STAKE J

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

IEEE TRANSACTIONS ON ELECTRON DEVICES

ASAD M, JEPPSON KO, VOROBIEV A, BONMANN M, STAKE J