国家/地区 Sweden（5）
关键词 FIELDEFFECT TRANSISTORS FETS（5）
出版物 IEEE TRANSACTIONS O.（2）
出版时间
机构 CHALMERS UNI.（3）
作者 STAKE J（5） ANDERSSON MA（2） HABIBPOUR O（2） VOROBIEV A（2）
VUKUSIC J（2）

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

YANG XX, VOROBIEV A, JEPPSON K, STAKE J

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, HABIBPOUR O, VUKUSIC J, STAKE J

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, ZHANG YX, STAKE J

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

IEEE TRANSACTIONS ON ELECTRON DEVICES

ASAD M, JEPPSON KO, VOROBIEV A, BONMANN M, STAKE J