国家/地区 Turkey（14）
关键词 ELECTRICAL PROPERTI.（2） NANOSTRUCTURE（2） POLYMER TEXTILE FIB.（2）
出版物 COMPOSITES PART BEN.（2） JOURNAL OF MATERIAL.（2）
出版时间 2015（3） 2016（2） 2017（2） 2020（2） 2022（2）
机构 KASTAMONU UN.（4） GAZI UNIV（3） TURGUT OZAL .（2）
作者 ALTINDAL S（14）

A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures

IEEE SENSORS JOURNAL

CICEK O, ALTINDAL S, AZIZIANKALANDARAGH Y

Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

PHYSICA BCONDENSED MATTER

BAYDILLI EE, TAN SO, TECIMER HU, ALTINDAL S

Synthesis of boron and rare earth stabilized graphene doped polyvinylidene fluoride (PVDF) nanocomposite piezoelectric materials

POLYMER COMPOSITES

BADALI Y, KOCYIGIT S, AYTIMUR A, ALTINDAL S, USLU I

Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications

JOURNAL OF ELECTRONIC MATERIALS

CICEK O, TAN SO, TECIMER H, ALTINDAL S

Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

CETINKAYA H, ALTINDAL S, ORAK I, USLU I

Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

COMPOSITES PART BENGINEERING

CICEK O, TECIMER HU, TAN SO, TECIMER H, ORAK I, ALTINDAL S

Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

COMPOSITES PART BENGINEERING

CICEK O, TECIMER HU, TAN SO, TECIMER H, ALTINDAL S, USLU I

The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature

MICROELECTRONIC ENGINEERING

KAYA A, MARIL E, ALTINDAL S, USLU I

On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

MARIL E, KAYA A, CETINKAYA HG, KOCYIGIT S, ALTINDAL S

Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

CANADIAN JOURNAL OF PHYSICS

CETINKAYA HG, KAYA A, ALTINDAL S, KOCYIGIT S