国家/地区 Usa（6）
关键词 GRAPHENE（5） FIELDEFFECT TRANSIS.（2） MIXER（2）
SI MOSFET（2） TRANSISTOR（2）
出版物 IEEE ELECTRON DEVIC.（5）
出版时间 2012（2）
机构 HRL LABS LLC（6）
作者 CAMPBELL PM（6）

Graphene FETs for Zero-Bias Linear Resistive FET Mixers

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LE D, MCGUIRE C, SCHMITZ A, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LIN S, MCGUIRE C, LE D, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Ultra-low resistance ohmic contacts in graphene field effect transistors

APPLIED PHYSICS LETTERS

MOON JS, ANTCLIFFE M, SEO HC, CURTIS D, LIN S, SCHMITZ A, MILOSAVLJEVIC I, KISELEV AA, ROSS RS, GASKILL DK, CAMPBELL PM, FITCH RC, LEE KM, ASBECK P

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, ZEHNDER D, KIM S, GASKILL DK, JERNIGAN GG, MYERSWARD RL, EDDY CR, CAMPBELL PM, LEE KM, ASBECK P

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, BUI S, HU M, GASKILL DK, TEDESCO JL, ASBECK P, JERNIGAN GG, VANMIL BL, MYERSWARD RL, EDDY CR, CAMPBELL PM, WENG X

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, HU M, WONG D, MCGUIRE C, CAMPBELL PM, JERNIGAN G, TEDESCO JL, VANMIL B, MYERSWARD R, EDDY C, GASKILL DK