国家/地区 Usa（4）
关键词
出版物 NANO LETTERS（2）
出版时间 2009（4）
机构 USN（2）
作者 GASKILL DK（4）

Hall effect mobility of epitaxial graphene grown on silicon carbide

APPLIED PHYSICS LETTERS

TEDESCO JL, VANMIL BL, MYERSWARD RL, MCCRATE JM, KITT SA, CAMPBELL PM, JERNIGAN GG, CULBERTSON JC, EDDY CR, GASKILL DK

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

NANO LETTERS

ROBINSON JA, WETHERINGTON M, TEDESCO JL, CAMPBELL PM, WENG X, STITT J, FANTON MA, FRANTZ E, SNYDER D, VANMIL BL, JERNIGAN GG, MYERSWARD RL, EDDY CR, GASKILL DK

Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

NANO LETTERS

JERNIGAN GG, VANMIL BL, TEDESCO JL, TISCHLER JG, GLASER ER, DAVIDSON A, CAMPBELL PM, GASKILL DK

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, HU M, WONG D, MCGUIRE C, CAMPBELL PM, JERNIGAN G, TEDESCO JL, VANMIL B, MYERSWARD R, EDDY C, GASKILL DK