国家/地区 Usa（14）
关键词 GRAPHENE FIELDEFFEC.（3） CHEMICAL VAPOR DEPO.（2） CHEMICAL VAPOR DEPO.（2）
GRAPHENE（2） RADIO FREQUENCY RF（2）
出版物 IEEE ELECTRON DEVIC.（4） ACS NANO（2） IEEE TRANSACTIONS O.（2）
出版时间 2011（4） 2013（4） 2010（2） 2012（2）
机构 MIT（13）
作者 HSU A（14）

A Current-Voltage Model for Graphene Electrolyte-Gated Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

MACKIN C, HESS LH, HSU A, SONG Y, KONG J, GARRIDO JA, PALACIOS T

The effect of copper pre-cleaning on graphene synthesis

NANOTECHNOLOGY

KIM SM, HSU A, LEE YH, DRESSELHAUS M, PALACIOS T, KIM KK, KONG J

pH sensing properties of graphene solution-gated field-effect transistors

JOURNAL OF APPLIED PHYSICS

MAILLYGIACCHETTI B, HSU A, WANG H, VINCIGUERRA V, PAPPALARDO F, OCCHIPINTI L, GUIDETTI E, COFFA S, KONG J, PALACIOS T

Impact of Chlorine Functionalization on High-Mobility Chemical Vapor Deposition Grown Graphene

ACS NANO

ZHANG X, HSU A, WANG H, SONG Y, KONG J, DRESSELHAUS MS, PALACIOS T

Synthesis of Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery

NANO LETTERS

KIM SM, HSU A, ARAUJO PT, LEE YH, PALACIOS T, DRESSELHAUS M, IDROBO JC, KIM KK, KONG J

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

ACS NANO

KIM KK, HSU A, JIA XT, KIM SM, SHI YM, DRESSELHAUS M, PALACIOS T, KONG J

Delay Analysis of Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

WANG H, HSU A, LEE DS, KIM KK, KONG J, PALACIOS T

BN/Graphene/BN Transistors for RF Applications

IEEE ELECTRON DEVICE LETTERS

WANG H, TAYCHATANAPAT T, HSU A, WATANABE K, TANIGUCHI T, JARILLOHERRERO P, PALACIOS T

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

IEEE ELECTRON DEVICE LETTERS

HSU A, WANG H, KIM KK, KONG J, PALACIOS T

High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

HSU A, WANG H, KIM KK, KONG J, PALACIOS T