国家/地区 Usa（3）
关键词 CARRIER DENSITY（3）
出版物
出版时间 2017（2）
机构 NATL INST ST.（2）
作者 ELMQUIST RE（3）

Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

PAYAGALA SU, RIGOSI AF, PANNA AR, POLLAROLO A, KRUSKOPF M, SCHLAMMINGER S, JARRETT DG, BROWN R, ELMQUIST RE, BROWN D, NEWELL DB

Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC

2D MATERIALS

LIU CW, CHUANG CS, YANG YF, ELMQUIST RE, HO YJ, LEE HY, LIANG CT

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

CARBON

YANG YF, CHENG GJ, MENDE P, CALIZO IG, FEENSTRA RM, CHUANG C, LIU CW, LIU CI, JONES GR, WALKER ARH, ELMQUIST RE