国家/地区 Usa（4）
关键词 FIELD EFFECT TRANSISTOR（4）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2009（4）
机构
作者

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

APPLIED PHYSICS LETTERS

LUISIER M, KLIMECK G

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW

I-V curve signatures of nonequilibrium-driven band gap collapse in magnetically ordered zigzag graphene nanoribbon two-terminal devices

PHYSICAL REVIEW B

ARESHKIN DA, NIKOLIC BK

Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

JOURNAL OF APPLIED PHYSICS

ZHAO P, GUO J