国家/地区 Usa（4）
关键词 INSULATED GATE FIELD EFFECT TRANSISTOR（4）
出版物 APPLIED PHYSICS LET.（3）
出版时间 2009（2） 2010（2）
机构
作者 COLOMBO L（2）

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

DIMITRAKOPOULOS C, LIN YM, GRILL A, FARMER DB, FREITAG M, SUN YN, HAN SJ, CHEN ZH, JENKINS KA, ZHU Y, LIU ZH, MCARDLE TJ, OTT JA, WISNIEFF R, AVOURIS P

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J

Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

APPLIED PHYSICS LETTERS

UNARUNOTAI S, MURATA Y, CHIALVO CE, KIM HS, MACLAREN S, MASON N, PETROV I, ROGERS JA

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK