国家/地区 Usa（2）
关键词 INSULATED GATE FIELD EFFECT TRANSISTOR（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2009（2）
机构
作者

Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

APPLIED PHYSICS LETTERS

UNARUNOTAI S, MURATA Y, CHIALVO CE, KIM HS, MACLAREN S, MASON N, PETROV I, ROGERS JA

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK