国家/地区 Usa（7）
关键词
出版物 APPLIED PHYSICS LET.（4）
出版时间 2008（7）
机构 UNIV FLORIDA（6）
作者 GUO J（7）

Computational Model of Edge Effects in Graphene Nanoribbon Transistors

NANO RESEARCH

ZHAO P, CHOUDHURY M, MOHANRAM K, GUO J

Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

IEEE TRANSACTIONS ON ELECTRON DEVICES

YOON Y, FIORI G, HONG S, IANNACCONE G, GUO J

Carrier scattering in graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

OUYANG YJ, WANG XR, DAI HJ, GUO J

Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors

PHYSICAL REVIEW LETTERS

WANG XR, OUYANG YJ, LI XL, WANG HL, GUO J, DAI HJ

Field effect on spin-polarized transport in graphene nanoribbons

APPLIED PHYSICS LETTERS

GUO J, GUNLYCKE D, WHITE CT

Meta-semiconductor junction of graphene nanoribbons

APPLIED PHYSICS LETTERS

HONG S, YOON Y, GUO J

Analysis of ballistic monolayer and bilayer graphene field-effect transistors

APPLIED PHYSICS LETTERS

OUYANG YJ, CAMPBELL P, GUO J