国家/地区 Usa（4）
关键词
出版物 NANO LETTERS（3）
出版时间 2009（4）
机构 IBM CORP（3）
作者 FARMER DB（4）

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

NANO LETTERS

FARMER DB, CHIU HY, LIN YM, JENKINS KA, XIA FN, AVOURIS P

Behavior of a chemically doped graphene junction

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AFZALIARDAKANI A, AVOURIS P

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

NANO LETTERS

FARMER DB, GOLIZADEHMOJARAD R, PEREBEINOS V, LIN YM, TULEVSKI GS, TSANG JC, AVOURIS P

Operation of Graphene Transistors at Gigahertz Frequencies

NANO LETTERS

LIN YM, JENKINS KA, VALDESGARCIA A, SMALL JP, FARMER DB, AVOURIS P