国家/地区 Usa（19）
关键词
出版物 JOURNAL OF VACUUM SCIENCE TECHNOLOGY B（19）
出版时间 2012（19）
机构 SUNY ALBANY（3） GEORGIA INST.（2） SUNY BUFFALO（2） USN（2）
作者 GASKILL DK（3） WHEELER VD（3） ABEL J（2） BANERJEE S（2）
FISCHER DA（2） JAYE C（2） LABELLA VP（2） LEE V（2）
MATSUBAYASHI.（2） NYAKITI LO（2）

In situ near-edge x-ray absorption fine structure spectroscopy investigation of the thermal defunctionalization of graphene oxide

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LEE V, DENNIS RV, JAYE C, WANG X, FISCHER DA, CARTWRIGHT AN, BANERJEE S

Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

ABEL J, MATSUBAYASHI A, MURRAY T, DIMITRAKOPOULOS C, FARMER DB, AFZALI A, GRILL A, SUNG CY, LABELLA VP

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HE GW, SRIVASTAVA N, FEENSTRA RM

Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

NELSON F, SANDIN A, DOUGHERTY DB, ASPNES DE, ROWE JE, DIEBOLD AC

Near-edge x-ray absorption fine structure spectroscopy studies of charge redistribution at graphene/dielectric interfaces

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SCHULTZ BJ, LEE V, PRICE J, JAYE C, LYSAGHT PS, FISCHER DA, PRENDERGAST D, BANERJEE S

Effects of semiconductor processing chemicals on conductivity of graphene

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

CHEN CW, REN F, CHI GC, HUNG SC, HUANG YP, KIM J, KRAVCHENKO I, PEARTON SJ

Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SOJOUDI H, BALTAZAR J, HENDERSON C, GRAHAM S

Graphene functionalization and seeding for dielectric deposition and device integration

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

GARCES NY, WHEELER VD, GASKILL DK

Direct measurement of quasiparticle lifetimes in graphene using time-resolved photoemission

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

GILBERTSON S, DURAKIEWICZ T, ZHU JX, MOHITE AD, DATTELBAUM A, RODRIGUEZ G

Valley and spin polarization from graphene line defect scattering

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

GUNLYCKE D, WHITE CT