国家/地区 Usa（4）
关键词
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（4）
出版时间 2015（4）
机构 COLUMBIA UNI.（2）
作者 SHEPARD K（2）

Properties of Self-Aligned Short-Channel Graphene Field-Effect Transistors Based on Boron-Nitride-Dielectric Encapsulation and Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHARI T, MERIC I, DEAN C, SHEPARD K

Device Model for Graphene Spin Valves

IEEE TRANSACTIONS ON ELECTRON DEVICES

LIU FL, LIU Y, SMITH DL, RUDEN PP

Technology/Circuit/System Co-Optimization and Benchmarking for Multilayer Graphene Interconnects at Sub-10-nm Technology Node

IEEE TRANSACTIONS ON ELECTRON DEVICES

PAN CY, RAGHAVAN P, CEYHAN A, CATTHOOR F, TOKEI Z, NAEEMI A

Noise Modeling of Graphene Resonant Channel Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LEKAS M, LEE S, CHA W, HONE J, SHEPARD K