国家/地区 Usa（4）
关键词
出版物
出版时间 2016（4）
机构 NORTHWESTERN.（2）
作者 SCHMUCKER SW（4）

Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation

PHYSICAL REVIEW B

FRIEDMAN AL, CRESS CD, SCHMUCKER SW, ROBINSON JT, VAN T ERVE OMJ

Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

ACS APPLIED MATERIALS INTERFACES

ARNOLD HN, CRESS CD, MCMORROW JJ, SCHMUCKER SW, SANGWAN VK, JABERANSARI L, KUMAR R, PUNTAMBEKAR KP, LUCK KA, MARKS TJ, HERSAM MC

Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control

ACS NANO

CRESS CD, SCHMUCKER SW, FRIEDMAN AL, DEV P, CULBERTSON JC, LYDING JW, ROBINSON JT

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

APPLIED PHYSICS LETTERS

ARNOLD HN, SANGWAN VK, SCHMUCKER SW, CRESS CD, LUCK KA, FRIEDMAN AL, ROBINSON JT, MARKS TJ, HERSAM MC