国家/地区 Usa（6）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2009（2） 2010（2） 2012（2）
机构 CARNEGIE MELLON UNIV（6）
作者 LUXMI（6）

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

PHYSICAL REVIEW B

LUXMI, SRIVASTAVA N, HE G, FEENSTRA RM, FISHER PJ

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

LUXMI, SRIVASTAVA N, FEENSTRA RM, FISHER PJ

Morphology of graphene on SiC(000(1)over-bar) surfaces

APPLIED PHYSICS LETTERS

LUXMI, FISHER PJ, SRIVASTAVA N, FEENSTRA RM, SUN YG, KEDZIERSKI J, HEALEY P, GU G

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

JOURNAL OF ELECTRONIC MATERIALS

LUXMI, NIE S, FISHER PJ, FEENSTRA RM, GU G, SUN YG