国家/地区 Usa（4）
关键词 GRAPHENE（2） RADIO FREQUENCY RF（2）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间
机构 IBM TJ WATSON RES CTR（4）
作者 JENKINS KA（4）

Multifinger Embedded T-Shaped Gate Graphene RF Transistors With High f(MAX)/f(T) Ratio

IEEE ELECTRON DEVICE LETTERS

HAN SJ, OIDA S, JENKINS KA, LU D, ZHU Y

Current Saturation in Submicrometer Graphene Transistors with Thin Gate Dielectric: Experiment, Simulation, and Theory

ACS NANO

HAN SJ, REDDY D, CARPENTER GD, FRANKLIN AD, JENKINS KA

Dual-Gate Graphene FETs With f(T) of 50 GHz

IEEE ELECTRON DEVICE LETTERS

LIN YM, CHIU HY, JENKINS KA, FARMER DB, AVOURIS P, VALDESGARCIA A

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

NANO LETTERS

FARMER DB, CHIU HY, LIN YM, JENKINS KA, XIA FN, AVOURIS P