国家/地区 Usa（13）
关键词 GRAPHENE FIELDEFFEC.（3） CHEMICAL VAPOR DEPO.（2） RADIO FREQUENCY RF（2）
出版物 IEEE ELECTRON DEVIC.（4） ACS NANO（2） IEEE TRANSACTIONS O.（2）
出版时间 2011（4） 2013（3） 2010（2） 2012（2）
机构 MIT（13）
作者 HSU A（13）

A Current-Voltage Model for Graphene Electrolyte-Gated Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

MACKIN C, HESS LH, HSU A, SONG Y, KONG J, GARRIDO JA, PALACIOS T

The effect of copper pre-cleaning on graphene synthesis

NANOTECHNOLOGY

KIM SM, HSU A, LEE YH, DRESSELHAUS M, PALACIOS T, KIM KK, KONG J

pH sensing properties of graphene solution-gated field-effect transistors

JOURNAL OF APPLIED PHYSICS

MAILLYGIACCHETTI B, HSU A, WANG H, VINCIGUERRA V, PAPPALARDO F, OCCHIPINTI L, GUIDETTI E, COFFA S, KONG J, PALACIOS T

Impact of Chlorine Functionalization on High-Mobility Chemical Vapor Deposition Grown Graphene

ACS NANO

ZHANG X, HSU A, WANG H, SONG Y, KONG J, DRESSELHAUS MS, PALACIOS T

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

ACS NANO

KIM KK, HSU A, JIA XT, KIM SM, SHI YM, DRESSELHAUS M, PALACIOS T, KONG J

Delay Analysis of Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

WANG H, HSU A, LEE DS, KIM KK, KONG J, PALACIOS T

BN/Graphene/BN Transistors for RF Applications

IEEE ELECTRON DEVICE LETTERS

WANG H, TAYCHATANAPAT T, HSU A, WATANABE K, TANIGUCHI T, JARILLOHERRERO P, PALACIOS T

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

IEEE ELECTRON DEVICE LETTERS

HSU A, WANG H, KIM KK, KONG J, PALACIOS T

High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

HSU A, WANG H, KIM KK, KONG J, PALACIOS T

Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

WANG H, HSU A, KONG J, ANTONIADIS DA, PALACIOS T