国家/地区 Usa（9）
关键词 GRAPHENE（5） TRANSISTOR（3）
出版物 APPLIED PHYSICS LET.（2） IEEE ELECTRON DEVIC.（2）
出版时间 2011（4） 2012（2） 2013（2）
机构 USA（9）
作者 NAYFEH OM（4） BALU R（2） DUBEY M（2）

Bandgap tuning of mono- and bilayer graphene doped with group IV elements

JOURNAL OF APPLIED PHYSICS

KAPLAN D, SWAMINATHAN V, RECINE G, BALU R, KARNA S

Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

APPLIED PHYSICS LETTERS

NAYFEH OM, BIRDWELL AG, TAN C, DUBEY M, GULLAPALLI H, LIU Z, REDDY ALM, AJAYAN PM

Heat-treated hemin supported on graphene nanoplatelets for the oxygen reduction reaction

ELECTROCHEMISTRY COMMUNICATIONS

JIANG RZ, TRAN DT, MCCLURE J, CHU D

Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers

APPLIED PHYSICS LETTERS

BALU R, ZHONG XL, PANDEY R, KARNA SP

Graphene-aluminum nanocomposites

MATERIALS SCIENCE ENGINEERING ASTRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE PROCESSING

BARTOLUCCI SF, PARAS J, RAFIEE MA, RAFIEE J, LEE S, KAPOOR D, KORATKAR N

Graphene Transistors on Mechanically Flexible Polyimide Incorporating Atomic-Layer-Deposited Gate Dielectric

IEEE ELECTRON DEVICE LETTERS

NAYFEH OM

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM

Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

IEEE ELECTRON DEVICE LETTERS

NAYFEH OM, MARR T, DUBEY M

Theoretical prediction of stress-induced phase transformations of the second kind in graphene

PHYSICAL REVIEW B

CHUNG PW