国家/地区 Usa（13）
关键词 GRAPHENE（4） ATOMIC LAYER DEPOSI.（3） CHEMICAL VAPOR DEPO.（2）
出版物 APPLIED PHYSICS LET.（4） JOURNAL OF PHYSICAL.（3） ACS NANO（2）
出版时间 2012（4） 2014（3） 2010（2） 2011（2）
机构 UNIV TEXAS DALLAS（13）
作者 COLOMBO L（13）

Scaling of HfO2 dielectric on CVD graphene

APPLIED SURFACE SCIENCE

MCDONNELL S, AZCATL A, MORDI G, FLORESCA C, PIRKLE A, COLOMBO L, KIM J, KIM M, WALLACE RM

Grain Boundary Effect on Electrical Transport Properties of Graphene

JOURNAL OF PHYSICAL CHEMISTRY C

ZHANG HJ, LEE G, GONG C, COLOMBO L, CHO K

Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

PARK S, LEE S, MORDI G, JANDHYALA S, HA MW, LEE JS, COLOMBO L, WALLACE RM, LEE BH, KIM J

Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide

JOURNAL OF PHYSICAL CHEMISTRY C

GONG C, FLORESCA HC, HINOJOS D, MCDONNELL S, QIN XY, HAO YF, JANDHYALA S, MORDI G, KIM J, COLOMBO L, RUOFF RS, KIM MJ, CHO K, WALLACE RM, CHABAL YJ

Photon-Assisted CVD Growth of Graphene Using Metal Adatoms As Catalysts

JOURNAL OF PHYSICAL CHEMISTRY C

GONG C, COLOMBO L, CHO K

Low-kappa organic layer as a top gate dielectric for graphene field effect transistors

APPLIED PHYSICS LETTERS

MORDI G, JANDHYALA S, FLORESCA C, MCDONNELL S, KIM MJ, WALLACE RM, COLOMBO L, KIM J

Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition

ACS NANO

CHAN J, VENUGOPAL A, PIRKLE A, MCDONNELL S, HINOJOS D, MAGNUSON CW, RUOFF RS, COLOMBO L, WALLACE RM, VOGEL EM

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

ACS NANO

JANDHYALA S, MORDI G, LEE B, LEE G, FLORESCA C, CHA PR, AHN J, WALLACE RM, CHABAL YJ, KIM MJ, COLOMBO L, CHO K, KIM J

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

APPLIED PHYSICS LETTERS

PIRKLE A, CHAN J, VENUGOPAL A, HINOJOS D, MAGNUSON CW, MCDONNELL S, COLOMBO L, VOGEL EM, RUOFF RS, WALLACE RM

Effective mobility of single-layer graphene transistors as a function of channel dimensions

JOURNAL OF APPLIED PHYSICS

VENUGOPAL A, CHAN J, LI XS, MAGNUSON CW, KIRK WP, COLOMBO L, RUOFF RS, VOGEL EM