国家/地区 Usa（4）
关键词 ELEMENTAL SEMICONDUCTOR（4）
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2010（4）
机构
作者

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Graphene destruction by metal-carbide formation: An approach for patterning of metal-supported graphene

APPLIED PHYSICS LETTERS

LAHIRI J, BATZILL M

Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)

APPLIED PHYSICS LETTERS

HARRISON SE, CAPANO MA, REIFENBERGER R

Single step, complementary doping of graphene

APPLIED PHYSICS LETTERS

BRENNER K, MURALI R