国家/地区 France（2） Usa（2）
关键词 SILICON COMPOUND（8）
出版物 PHYSICAL REVIEW B（8）
出版时间 2009（8）
机构
作者 HIEBEL F（2） MAGAUD L（2） MALLET P（2） VEUILLEN JY（2）

Atomic and electronic structure of monolayer graphene on 6H-SiC(0001)(3x3): A scanning tunneling microscopy study

PHYSICAL REVIEW B

HIEBEL F, MALLET P, MAGAUD L, VEUILLEN JY

Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

PHYSICAL REVIEW B

SIEGEL DA, ZHOU SY, EL GABALY F, SCHMID AK, MCCARTY KF, LANZARA A

Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

PHYSICAL REVIEW B

SONDE S, GIANNAZZO F, RAINERI V, YAKIMOVA R, HUNTZINGER JR, TIBERJ A, CAMASSEL J

Stacking domains of epitaxial few-layer graphene on SiC(0001)

PHYSICAL REVIEW B

HIBINO H, MIZUNO S, KAGESHIMA H, NAGASE M, YAMAGUCHI H

Spatially resolved spectroscopy of monolayer graphene on SiO2

PHYSICAL REVIEW B

DESHPANDE A, BAO W, MIAO F, LAU CN, LEROY BJ

Graphene on the C-terminated SiC (0001) surface: An ab initio study

PHYSICAL REVIEW B

MAGAUD L, HIEBEL F, VARCHON F, MALLET P, VEUILLEN JY

Stability of graphene band structures against an external periodic perturbation: Na on graphene

PHYSICAL REVIEW B

HWANG CG, SHIN SY, CHOI SM, KIM ND, UHM SH, KIM HS, HWANG CC, NOH DY, JHI SH, CHUNG JW

Effective doping of single-layer graphene from underlying SiO2 substrates

PHYSICAL REVIEW B

SHI YM, DONG XC, CHEN P, WANG JL, LI LJ