国家/地区 Japan（8）
关键词
出版物 JAPANESE JOURNAL OF.（4） APPLIED PHYSICS EXP.（2） JOURNAL OF APPLIED .（2）
出版时间 2009（8）
机构 HOKKAIDO UNI.（4） UNIV AIZU（4）
作者 OTSUJI T（8）

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, DUBINOV AA, ALESHKIN VY

Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator

APPLIED PHYSICS EXPRESS

DUBINOV AA, ALESHKIN VY, RYZHII M, OTSUJI T, RYZHII V

Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors

APPLIED PHYSICS EXPRESS

SANO E, OTSUJI T

Device model for graphene bilayer field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, KIROVA N

Graphene Nanoribbon Phototransistor: Proposal and Analysis

JAPANESE JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, RYABOVA N, MITIN V, OTSUJI T

Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Performance Prediction of Graphene-Channel Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T