国家/地区 India（2）
关键词 EFFECTIVE MAS（3）
出版物
出版时间 2010（3）
机构 INDIAN INST .（2）
作者

External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon

NANO LETTERS

MAJUMDAR K, MURALI KVRM, BHAT N, LIN YM

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP

Negative differential conductance and effective electron mass in highly asymmetric ballistic bilayer graphene nanoribbon

PHYSICS LETTERS A

BHATTACHARYA S, MAHAPATRA S