国家/地区 Germany（7）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2010（7）
机构 MAX PLANCK INST FESTKORPERFORSCH（7）
作者 KERN K（5） RIEDL C（3） STARKE U（3） BURGHARD M（2）
COLETTI C（2） KRAUSS B（2） LEE DS（2） SMET JH（2）

Gate dependent photocurrents at a graphene p-n junction

APPLIED PHYSICS LETTERS

PETERS EC, LEE EJH, BURGHARD M, KERN K

Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RIEDL C, COLETTI C, STARKE U

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

PHYSICAL REVIEW B

GIERZ I, SUZUKI T, WEITZ RT, LEE DS, KRAUSS B, RIEDL C, STARKE U, HOCHST H, SMET JH, AST CR, KERN K

Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

PHYSICAL REVIEW B

COLETTI C, RIEDL C, LEE DS, KRAUSS B, PATTHEY L, VON KLITZING K, SMET JH, STARKE U

Atomic Structure of Reduced Graphene Oxide

NANO LETTERS

GOMEZNAVARRO C, MEYER JC, SUNDARAM RS, CHUVILIN A, KURASCH S, BURGHARD M, KERN K, KAISER U

Image potential states as a quantum probe of graphene interfaces

NEW JOURNAL OF PHYSICS

BOSE S, SILKIN VM, OHMANN R, BRIHUEGA I, VITALI L, MICHAELIS CH, MALLET P, VEUILLEN JY, SCHNEIDER MA, CHULKOV EV, ECHENIQUE PM, KERN K

Marker-free on-the-fly fabrication of graphene devices based on fluorescence quenching

NANOTECHNOLOGY

SAGAR A, KERN K, BALASUBRAMANIAN K