国家/地区 Switzerland（10）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（2） NEW JOURNAL OF PHYS.（2）
出版时间 2010（10）
机构 ETH（8） SWISS FED IN.（2）
作者 ENSSLIN K（10）

Towards electron transport measurements in chemically modified graphene: effect of a solvent

NEW JOURNAL OF PHYSICS

JACOBSEN A, KOEHLER FM, STARK WJ, ENSSLIN K

Imaging localized states in graphene nanostructures

PHYSICAL REVIEW B

SCHNEZ S, GUTTINGER J, HUEFNER M, STAMPFER C, ENSSLIN K, IHN T

Spin States in Graphene Quantum Dots

PHYSICAL REVIEW LETTERS

GUTTINGER J, FREY T, STAMPFER C, IHN T, ENSSLIN K

Rectification in three-terminal graphene junctions

APPLIED PHYSICS LETTERS

JACOBSEN A, SHORUBALKO I, MAAG L, SENNHAUSER U, ENSSLIN K

Selective Chemical Modification of Graphene Surfaces: Distinction Between Single- and Bilayer Graphene

SMALL

KOEHLER FM, JACOBSEN A, ENSSLIN K, STAMPFER C, STARK WJ

The Aharonov-Bohm effect in a side-gated graphene ring

NEW JOURNAL OF PHYSICS

HUEFNER M, MOLITOR F, JACOBSEN A, PIODA A, STAMPFER C, ENSSLIN K, IHN T

Quantum capacitance and density of states of graphene

APPLIED PHYSICS LETTERS

DROSCHER S, ROULLEAU P, MOLITOR F, STUDERUS P, STAMPFER C, ENSSLIN K, IHN T

Energy and transport gaps in etched graphene nanoribbons

SEMICONDUCTOR SCIENCE TECHNOLOGY

MOLITOR F, STAMPFER C, GUTTINGER J, JACOBSEN A, IHN T, ENSSLIN K

Observation of excited states in a graphene double quantum dot

EPL

MOLITOR F, KNOWLES H, DROSCHER S, GASSER U, CHOI T, ROULLEAU P, GUTTINGER J, JACOBSEN A, STAMPFER C, ENSSLIN K, IHN T

Graphene single-electron transistors

MATERIALS TODAY

IHN T, GUTTINGER J, MOLITOR F, SCHNEZ S, SCHURTENBERGER E, JACOBSEN A, HELLMULLER S, FREY T, DROSCHER S, STAMPFER C, ENSSLIN K