国家/地区 Korea（6）
关键词
出版物 APPLIED PHYSICS LET.（3） NANOTECHNOLOGY（2）
出版时间 2011（6）
机构 GWANGJU INST.（6）
作者 LEE BH（6）

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH

Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC

APPLIED PHYSICS LETTERS

HWANG HJ, CHO C, LIM SK, LEE SY, KANG CG, HWANG H, LEE BH

Enhanced characteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments

APPLIED PHYSICS LETTERS

LEE S, KANG SJ, JO G, CHOE M, PARK W, YOON J, KWON T, KAHNG YH, KIM DY, LEE BH, LEE T

Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

NANOTECHNOLOGY

KANG CG, KANG JW, LEE SK, LEE SY, CHO CH, HWANG HJ, LEE YG, HEO J, CHUNG HJ, YANG H, SEO S, PARK SJ, KO KY, AHN J, LEE BH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks

NANOTECHNOLOGY

KAHNG YH, LEE S, CHOE M, JO G, PARK W, YOON J, HONG WK, CHO CH, LEE BH, LEE T