国家/地区 Usa（5） Spain（2）
关键词 RADIO FREQUENCY RF（7）
出版物 IEEE TRANSACTIONS O.（3） IEEE ELECTRON DEVIC.（2）
出版时间 2011（7）
机构 MIT（2） UNIV AUTONOM.（2）
作者 HSU A（2） JIMENEZ D（2） PALACIOS T（2） WANG H（2）

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D, MOLDOVAN O

On the Importance of Bandgap Formation in Graphene for Analog Device Applications

IEEE TRANSACTIONS ON NANOTECHNOLOGY

DAS S, APPENZELLER J

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM

BN/Graphene/BN Transistors for RF Applications

IEEE ELECTRON DEVICE LETTERS

WANG H, TAYCHATANAPAT T, HSU A, WATANABE K, TANIGUCHI T, JARILLOHERRERO P, PALACIOS T

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

IEEE ELECTRON DEVICE LETTERS

HSU A, WANG H, KIM KK, KONG J, PALACIOS T

Assessment of high-frequency performance limits of graphene field-effect transistors

NANO RESEARCH

CHAUHAN J, GUO J