国家/地区 Japan（5）
关键词
出版物 JAPANESE JOURNAL OF.（4）
出版时间 2011（5）
机构 HOKKAIDO UNI.（4）
作者 SANO E（5）

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Impact of Site-Potential Asymmetry on Electron Transport in Graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E

Monte Carlo Simulation of Ultrafast Electron Relaxation in Graphene

APPLIED PHYSICS EXPRESS

SANO E

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T