国家/地区 Japan（4）
关键词
出版物 JAPANESE JOURNAL OF.（3）
出版时间 2011（4）
机构 HOKKAIDO UNIV（4）
作者 SANO E（4）

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Impact of Site-Potential Asymmetry on Electron Transport in Graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E

Monte Carlo Simulation of Ultrafast Electron Relaxation in Graphene

APPLIED PHYSICS EXPRESS

SANO E

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T