国家/地区 Usa（4）
关键词
出版物
出版时间 2012（4）
机构 CARNEGIE MELLON UNIV（4）
作者 FEENSTRA RM（4）

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HE GW, SRIVASTAVA N, FEENSTRA RM

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG

Single-particle tunneling in doped graphene-insulator-graphene junctions

JOURNAL OF APPLIED PHYSICS

FEENSTRA RM, JENA D, GU G

Interface structure of graphene on SiC(000(1)over-bar)

PHYSICAL REVIEW B

SRIVASTAVA N, HE GW, LUXMI, FEENSTRA RM