国家/地区 Germany（5）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2013（5）
机构 UNIV ERLANGEN NURNBERG（5）
作者 SEYLLER T（5）

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

PHYSICAL REVIEW B

OSTLER M, DERETZIS I, MAMMADOV S, GIANNAZZO F, NICOTRA G, SPINELLA C, SEYLLER T, LA MAGNA A

Robust Graphene Membranes in a Silicon Carbide Frame

ACS NANO

WALDMANN D, BUTZ B, BAUER S, ENGLERT JM, JOBST J, ULLMANN K, FROMM F, AMMON M, ENZELBERGEE M, HIRSCH A, MAIER S, SCHMUKI P, SEYLLER T, SPIECKER E, WEBERT HB

Growth and electronic structure of boron-doped graphene

PHYSICAL REVIEW B

GEBHARDT J, KOCH RJ, ZHAO W, HOFERT O, GOTTERBARM K, MAMMADOV S, PAPP C, GORLING A, STEINRUCK HP, SEYLLER T

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

FROMM F, OLIVEIRA MH, MOLINASANCHEZ A, HUNDHAUSEN M, LOPES JMJ, RIECHERT H, WIRTZ L, SEYLLER T

On the Way to GraphanePronounced Fluorescence of Polyhydrogenated Graphene

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

SCHAFER RA, ENGLERT JM, WEHRFRITZ P, BAUER W, HAUKE F, SEYLLER T, HIRSCH A