国家/地区 Japan（5）
关键词 DEFECT（5）
出版物 ACS NANO（3）
出版时间 2013（5）
机构
作者

Rearrangement of pi-Electron Network and Switching of Edge-Localized pi State in Reduced Graphene Oxide

ACS NANO

FUJII S, ENOKI T

Hole doping by adsorption of oxygen on a Stone-Thrower-Wales defect in graphene

SOLID STATE COMMUNICATIONS

GUANG H, AOKI M, TANAKA S, KOHYAMA M

First-principles investigation of the influence of adsorbed atom on the defect and impurity substitute graphene

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

NAKADA K, ISHII A, YAMAMOTO N

Conduction Tuning of Graphene Based on Defect-Induced Localization

ACS NANO

NAKAHARAI S, IIJIMA T, OGAWA S, SUZUKI S, LI SL, TSUKAGOSHI K, SATO S, YOKOYAMA N

Regulating Infrared Photoresponses in Reduced Graphene Oxide Phototransistors by Defect and Atomic Structure Control

ACS NANO

CHANG HX, SUN ZH, SAITO M, YUAN QH, ZHANG H, LI JH, WANG ZC, FUJITA T, DING F, ZHENG ZJ, YAN F, WU HK, CHEN MW, IKUHARA Y