国家/地区 Malaysia（9）
关键词 BILAYER GRAPHENE（2） CONDUCTANCE（2）
出版物 JOURNAL OF COMPUTAT.（3） JOURNAL OF NANOMATE.（3）
出版时间 2013（9）
机构 UNIV TEKNOL .（7）
作者 SAEIDMANESH M（9）

Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

SAEIDMANESH M, ISMAIL R, KHALEDIAN M, KARIMI H, AKBARI E

Perpendicular Electric Field Effect on Electronic Properties of Bilayer Graphene

SCIENCE OF ADVANCED MATERIALS

KIANI MJ, HARUN FKC, SAEIDMANESH M, RAHMANI M, PARVIZI A, AHMADI MT

Layer Effect on Graphene Nanoribbon Quantum Capacitance

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

KIANI MJ, AHMADI MT, RAVANGARD SA, SAEIDMANESH M, GHADIRY M, HARUN FKC

Gas Concentration Effect on Channel Capacitance in Graphene Based Sensors

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

AKBARI E, AHMADI MT, YUSOF R, GHADIRY MH, SAEIDMANESH M

Perpendicular Electric Field Effect on Bilayer Graphene Carrier Statistic

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

SAEIDMANESH M, AHMADI MT, GHADIRY M, AKBARI E, KIANI MJ, ISMAIL R

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

NANOSCALE RESEARCH LETTERS

RAHMANI M, AHMADI MT, ABADI HKF, SAEIDMANESH M, AKBARI E, ISMAIL R

The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

JOURNAL OF NANOMATERIALS

RAHMANI M, ISMAIL R, AHMADI MT, KIANI MJ, SAEIDMANESH M, KARIMI FAH, AKBARI E, RAHMANI K

Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

JOURNAL OF NANOMATERIALS

KARIMI H, YUSOF R, AHMADI MT, SAEIDMANESH M, RAHMANI M, AKBARI E, KIAT AK

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

JOURNAL OF NANOMATERIALS

SAEIDMANESH M, KIANI MJ, SIEW KE, AKBARI E, KARIMI H, ISMAIL R