国家/地区 Usa（10）
关键词 GRAPHENE（2）
出版物 IEEE ELECTRON DEVIC.（2） PHYSICAL REVIEW LET.（2）
出版时间 2013（10）
机构 UNIV ARKANSA.（3） HRL LABS LLC（2）
作者 GASKILL DK（10）

Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

PHYSICAL REVIEW LETTERS

EMERY JD, DETLEFS B, KARMEL HJ, NYAKITI LO, GASKILL DK, HERSAM MC, ZEGENHAGEN J, BEDZYK MJ

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

ROBINSON ZR, ONG EW, MOWLL TR, TYAGI P, GASKILL DK, GEISLER H, VENTRICE CA

Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect

SCIENTIFIC REPORTS

ELLIS CT, STIER AV, KIM MH, TISCHLER JG, GLASER ER, MYERSWARD RL, TEDESCO JL, EDDY CR, GASKILL DK, CERNE J

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

SURFACE SCIENCE

XU P, ACKERMAN ML, BARBER SD, SCHOELZ JK, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK

Lateral Graphene Heterostructure Field-Effect Transistor

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, STRATAN F, ANTCLIFFE M, SCHMITZ A, ROSS RS, KISELEV AA, WHEELER VD, NYAKITI LO, GASKILL DK, LEE KM, ASBECK PM

Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect

PHYSICAL REVIEW LETTERS

KUHNE P, DARAKCHIEVA V, YAKIMOVA R, TEDESCO JD, MYERSWARD RL, EDDY CR, GASKILL DK, HERZINGER CM, WOOLLAM JA, SCHUBERT M, HOFMANN T

Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

XU P, BARBER SD, SCHOELZ JK, ACKERMAN ML, QI DJ, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK

Mode-locked 2-mu m wavelength fiber laser using a graphene-saturable absorber

OPTICAL ENGINEERING

CURRIE M, ANDERSON T, WHEELER V, NYAKITI LO, GARCES NY, MYERSWARD RL, EDDY CR, KUB FJ, GASKILL DK

Graphene FETs for Zero-Bias Linear Resistive FET Mixers

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LE D, MCGUIRE C, SCHMITZ A, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

JAPANESE JOURNAL OF APPLIED PHYSICS

XU P, ACKERMAN ML, BARBER SD, SCHOELZ JK, QI DJ, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK