国家/地区 Japan（7） Russia（3）
关键词
出版物 JOURNAL OF APPLIED .（4） JOURNAL OF PHYSICS .（3）
出版时间 2014（10）
机构 TOHOKU UNIV（6）
作者 RYZHII V（10）

Graphene nanoelectromechanical resonators for the detection of modulated terahertz radiation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SVINTSOV D, LEIMAN VG, RYZHII V, OTSUJI T, SHUR MS

Negative dynamic Drude conductivity in pumped graphene

APPLIED PHYSICS EXPRESS

SVINTSOV D, RYZHII V, OTSUJI T

Graphene vertical hot-electron terahertz detectors

JOURNAL OF APPLIED PHYSICS

RYZHII V, SATOU A, OTSUJI T, RYZHII M, MITIN V, SHUR MS

Carrier-carrier scattering and negative dynamic conductivity in pumped graphene

OPTICS EXPRESS

SVINTSOV D, RYZHII V, SATOU A, OTSUJI T, VYURKOV V

Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures

APPLIED PHYSICS LETTERS

RYZHII V, OTSUJI T, ALESHKIN VY, DUBINOV AA, RYZHII M, MITIN V, SHUR MS

Damping mechanism of terahertz plasmons in graphene on heavily doped substrate

JOURNAL OF APPLIED PHYSICS

SATOU A, KOSEKI Y, RYZHII V, VYURKOV V, OTSUJI T

Active graphene plasmonics for terahertz device applications

JOURNAL OF PHYSICS DAPPLIED PHYSICS

OTSUJI T, POPOV V, RYZHII V

All-graphene field-effect transistor based on lateral tunnelling

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SVINTSOV D, VYURKOV V, ORLIKOVSKY A, RYZHII V, OTSUJI T

Surface-plasmons lasing in double-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

DUBINOV AA, ALESHKIN VY, RYZHII V, SHUR MS, OTSUJI T

Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII M, RYZHII V, OTSUJI T, MALTSEV PP, LEIMAN VG, RYABOVA N, MITIN V