国家/地区 England（7）
关键词 GRAPHENE（2）
出版物 IET CIRCUITS DEVICE.（2）
出版时间 2015（7）
机构 NATL PHYS LA.（4） UNIV LONDON .（2）
作者 HAO L（7）

Microwave method for high-frequency properties of graphene

IET CIRCUITS DEVICES SYSTEMS

HAO L, GALLOP J, LIU Q, CHEN J

Self-supporting graphene films and their applications

IET CIRCUITS DEVICES SYSTEMS

GONISZEWSKI S, GALLOP J, ADABI M, GAJEWSKI K, SHAFOROST O, KLEIN N, SIERAKOWSKI A, CHEN J, CHEN YF, GOTSZALK T, HAO L

The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating

CARBON

HILLPEARCE RE, ELESS V, LARTSEV A, MARTIN NA, SNOOK ILB, HELMORE JJ, YAKIMOVA R, GALLOP JC, HAO L

Removal of Organic Contamination from Graphene with a Controllable Mass-Selected Argon Gas Cluster Ion Beam

JOURNAL OF PHYSICAL CHEMISTRY C

TYLER BJ, BRENNAN B, STEC H, PATEL T, HAO L, GILMORE IS, POLLARD AJ

Plasma treated graphene oxide films: structural and electrical studies

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

LI TY, PATEL T, BANERJEE I, PEARCEHILL R, GALLOP J, HAO L, RAY AK

Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

JOURNAL OF APPLIED PHYSICS

SHAFOROST O, WANG K, GONISZEWSKI S, ADABI M, GUO Z, HANHAM S, GALLOP J, HAO L, KLEIN N

Investigations of the effect of SiC growth face on graphene thickness uniformity and electronic properties

SURFACE TOPOGRAPHYMETROLOGY PROPERTIES

PEARCE R, TAN XR, WANG R, PATEL T, GALLOP J, POLLARD A, YAKIMOVA R, HAO L