国家/地区
关键词 DOPING（5）
出版物 ACS NANO（5）
出版时间 2015（5）
机构
作者

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

ACS NANO

KEPAPTSOGLOU D, HARDCASTLE TP, SEABOURNE CR, BANGERT U, ZAN R, AMANI JA, HOFSASS H, NICHOLLS RJ, BRYDSON RMD, SCOTT AJ, RAMASSE QM

Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

ACS NANO

LEE SY, DUONG DL, VU QA, JIN Y, KIM P, LEE YH

Electronic and Chemical Properties of Donor, Acceptor Centers in Graphene

ACS NANO

TELYCHKO M, MUTOMBO P, MERINO P, HAPALA P, ONDRACEK M, BOCQUET FC, SFORZINI J, STETSOVYCH O, VONDRACEK M, JELINEK P, SVEC M

Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure

ACS NANO

USACHOV DY, FEDOROV AV, PETUKHOV AE, VILKOV OY, RYBKIN AG, OTROKOV MM, ARNAU A, CHULKOV EV, YASHINA LV, FARJAM M, ADAMCHUK VK, SENKOVSKIY BV, LAUBSCHAT C, VYALIKH DV

Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition

ACS NANO

WEI DC, PENG L, LI ML, MAO HY, NIU TC, HAN C, CHEN W, WEE ATS