国家/地区 China（2）
关键词 MOLECULAR BEAM EPIT.（2） NANOMATERIAL（2）
出版物 JOURNAL OF CRYSTAL GROWTH（5）
出版时间 2015（5）
机构
作者

Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

MANSUROV V, MALIN T, GALITSYN Y, ZHURAVLEV K

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

JOURNAL OF CRYSTAL GROWTH

ALASKAR Y, ARAFIN S, LIN QY, WICKRAMARATNE D, MCKAY J, NORMAN AG, ZHANG Z, YAO LC, DING F, ZOU J, GOORSKY MS, LAKE RK, ZURBUCHEN MA, WANG KL

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

SCHUMANN T, LOPES JMJ, WOFFORD JM, OLIVEIRA MH, DUBSLAFF M, HANKE M, JAHN U, GEELHAAR L, RIECHERT H

Comprehensive nucleation mechanisms of quasi-monolayer graphene grown on Cu by chemical vapor deposition

JOURNAL OF CRYSTAL GROWTH

NING J, WANG D, HAN D, SHI YG, CAI WW, ZHANG JC, HAO Y

Single crystalline 3C-SiC nanowires grown on the diamond surface with the assistance of graphene

JOURNAL OF CRYSTAL GROWTH

DAI W, YU JH, WANG Y, SONG YZ, BAI H, JIANG N