国家/地区 Singapore（3）
关键词 HBN（9）
出版物 NANO LETTERS（2） SOLID STATE COMMUNI.（2）
出版时间 2016（9）
机构
作者 ZHANG YW（2）

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions

NANO LETTERS

CHANDNI U, WATANABE K, TANIGUCHI T, EISENSTEIN JP

Electronic properties of mutually embedded h-BN and graphene: A first principles study

CHEMICAL PHYSICS LETTERS

YU ZG, ZHANG YW

Advanced visible-light driven photocatalyst with enhanced charge separation fabricated by facile deposition of Ag3PO4 nanoparticles on graphene-like h-BN nanosheets

JOURNAL OF MOLECULAR CATALYSIS ACHEMICAL

ZHU CS, ZHENG JT, FANG LY, HU P, LIU YK, CAO XQ, WU MB

Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

BULLETIN OF MATERIALS SCIENCE

PALLA P, UPPU GR, ETHIRAJ AS, RAINA JP

Stacking nature and band gap opening of graphene: Perspective for optoelectronic applications

SOLID STATE COMMUNICATIONS

ULLAH N, ZHANG RQ, MURTAZA G, YAR A, MAHMOOD A

Ab initio calculations on twisted graphene/hBN: Electronic structure and STM image simulation

SOLID STATE COMMUNICATIONS

CORREA JD, CISTERNAS E

Topological Defects at the Graphene/h-BN interface Abnormally Enhance Its Thermal Conductance

NANO LETTERS

LIU XJ, ZHANG G, ZHANG YW

Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

WANG T, LU YH, FENG YP

Rapid and catalyst-free van der Waals epitaxy of graphene on hexagonal boron nitride

CARBON

MISHRA N, MISEIKIS V, CONVERTINO D, GEMMI M, PIAZZA V, COLETTI C