国家/地区 China（6）
关键词 FIELD EFFECT TRANSI.（2） GRAPHENE（2）
出版物 MATERIALS RESEARCH .（2）
出版时间 2016（6）
机构 CHINESE ACAD.（5）
作者 SHI JY（6）

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY

Towards a cleaner graphene surface in graphene field effect transistor via N,N-Dimethylacetamide

MATERIALS RESEARCH EXPRESS

MAO DC, PENG SA, WANG SQ, ZHANG DY, SHI JY, WANG XN, JIN Z

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

Characterization of the quality of metal-graphene contact with contact end resistance measurement

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

WANG SQ, MAO DC, MUHAMMAD A, PENG SG, ZHANG DY, SHI JY, JIN Z